Japanese start-up Power Diamond Systems has advanced its proprietary diamond MOSFET technology and, for the first time in the world for a diamond-based device, achieved a breakdown voltage of 550 V ...

Here is why gallium nitride (GaN) is the natural successor to silicon MOSFETs in the 100–650 V class of power devices.

ABSTRACT: In this study, a comparison of 5 nm PDSOI and FDSOI n-MOSFETs with SiO2 and high-k gate dielectrics is carried out using Silvaco TCAD ATLAS platform with necessary models. SOI architectures ...

Power electronics using 4H-SiC are extensive for applications in Photovoltaic (Inverter, MPPT etc.), Electric Vehicle, Power Conversion System (PCS), High-Voltage Direct Current transmission (HVDC), ...

Advanced trench technology dies reduce power loss by approximately 50 percent Mitsubishi Electric has announced that it will shortly start shipping samples of four new trench SiC-MOSFET bare dies ...

ROHM Semiconductor’s AW2K21 consists of a pair of 30-V N-channel power MOSFETs, configured in a common-source configuration that delivers an on-resistance of just 2.0 mΩ (typ.) in a compact 2.0- × 2.0 ...

iDEAL Semiconductor is now sampling the first products in its new series of silicon MOSFETs that leverage its SuperQ architecture to deliver efficiencies and performance that rival some compound ...

iDEAL Semiconductor announced its 150-V and 200-V SuperQ MOSFETs that improve conventional silicon designs and rival even WBG materials. iDEAL Semiconductor has formally launched its SuperQ power ...

1 College of Mathematics and Computer, Jilin Normal University, Siping, China. 2 College of Physics, Jilin Normal University, Siping, China. 3 Institute of Thought and Culture, Jilin Normal University ...

After dominating the electronics industry for decades, conventional silicon-based transistors are gradually approaching their limits, which is preventing engineers from further reducing their size ...