Japanese start-up Power Diamond Systems has advanced its proprietary diamond MOSFET technology and, for the first time in the world for a diamond-based device, achieved a breakdown voltage of 550 V ...

Here is why gallium nitride (GaN) is the natural successor to silicon MOSFETs in the 100–650 V class of power devices.

It is important to first recognize that the Gallium Oxide ecosystem is already quite diverse. We have successfully demonstrated a full toolset for power electronics, including kV-class Schottky ...

In early March 2026, Navitas Semiconductor introduced two new 1200 V silicon carbide MOSFET packages, a top-side cooled QDPAK and a low-profile TO-247-4L, aimed at boosting power density, thermal ...

There’s no denying SVS has been on a serious run lately. Over the past year, the company has worked its way through the subwoofer lineup, and while you could call it a refresh, that doesn’t really ...

There’s no denying SVS has been on a serious run lately. Over the past year, the company has worked its way through the subwoofer lineup, and while you could call it a refresh, that doesn’t really ...

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This FAQ analyzes the open-drain physical layer and the nuances of register-level addressing to better understand I2C communication.

The Federal Government is composed of three distinct branches: legislative, executive, and judicial, whose powers are vested by the U.S. Constitution in the Congress, the President, and the Federal ...